BSZ011NE2LS5IATMA1 vs BSZ070N08LS5ATMA1 Comparación
Comparación detallada lado a lado de BSZ011NE2LS5IATMA1 por Infineon y BSZ070N08LS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ011NE2LS5IATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,55 | $0,78 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | Logic-level (drive compatible with 4.5 V) |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | — |
| Encapsulado | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, unleaded reflow) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ 5 (80 V logic-level) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TC | — | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | — | [DATA_NEEDED: TA-rated ID] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 7 mΩ |
| On-Resistance RDS(on) @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | — | 69 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +150 °C |
| Avalanche Rated | — | Yes |
| Reel Quantity | — | 5000 per 13-inch reel (T&R) |