BTS724GXUMA1 vs BTS3405GXUMA1 Comparación
Comparación detallada lado a lado de BTS724GXUMA1 por Infineon y BTS3405GXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BTS724GXUMA1 | BTS3405GXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,21 | $0,55 |
| Topología | 4-channel high-side switch | — |
| Número de salidas | 4 | — |
| Configuración de salida | High-side | — |
| On-Resistance (RDS(on)) per Channel | 200 mOhm typical at 25 C | — |
| Continuous Load Current per Channel | 3 A | — |
| Supply Voltage (Vbb) | 5.5 V to 38 V | — |
| Operating Supply Voltage Range | 5.5 V to 38 V | — |
| Overvoltage Clamp (Vbb(AZ)) | Data needed - see datasheet | — |
| Standby Current | 8 mA typical (per datasheet family) | — |
| Input Type | CMOS-compatible, ground-referenced | — |
| Diagnostic Output | Yes - per-channel status flag | — |
| Protection Features | Overload, short-circuit, over-temperature, over-voltage | Overcurrent, Short-Circuit, Over-Temperature, Over-Voltage |
| Demagnetization | Fast demagnetization for inductive loads | — |
| Rango de temperatura de funcionamiento | -40 C to +150 C junction | -40 °C to +150 °C |
| Encapsulado | PG-DSO-20 (20-pin, exposed thermal considerations) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 3 | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Technology | Infineon Smart SIPMOS (vertical power MOSFET + charge pump) | — |
| Family | Classic PROFET 24V automotive smart high-side switch | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | HITFET (Classic) |
| Función | — | Dual-channel low-side power switch |
| Number of Channels | — | 2 (independent) |
| Switch Type | — | N-Channel MOSFET (low-side) |
| Continuous Output Current | — | 350 mA per channel |
| On-State Resistance (Rds_on) | — | 0.9 Ω (max) |
| Maximum Drain Voltage | — | 42 V |
| Input Logic Compatibility | — | CMOS/TTL logic-level |
| Package Type | — | PG-DSO-8 (8-pin SOIC) |