CGD65A130SH2 vs CGD65A130S2 Comparación
Comparación detallada lado a lado de CGD65A130SH2 por Cambridge GaN Devices y CGD65A130S2 por Cambridge GaN Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ ActivoCambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ ActivoComparación de especificaciones
| Parámetro | CGD65A130SH2 | CGD65A130S2 |
|---|---|---|
| Marca | Cambridge GaN Devices | Cambridge GaN Devices |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,95 | $4,65 |
| Tipo de transistor | GaN HEMT, N-Channel, Enhancement Mode | — |
| Technology | GaN-on-Si with ICeGaN® gate | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| On-Resistance (RDS(on)) | 55 mΩ (typical) | — |
| Encapsulado | 16-DFN (8x8 mm) with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Threshold | ICeGaN® 5 V compatible gate-threshold window | — |
| Current Sense Pin | Integrated CS output (digital/analog ratio) with NL³ circuit | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN intrinsic; datasheet figure) | 0 nC (GaN - negligible) |
| Switching Frequency Suitability | Up to several MHz (typical GaN-HEMT range) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: full -40C to +150C TJ range] | — |
| Nivel MSL | MSL3 (typical for 16-DFN GaN packages) | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Manufacturer | — | Cambridge GaN Devices |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss value at VDS=400V] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| Temperatura de unión de funcionamiento | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |