DG409DJ+ vs DG409CJ+ Comparación
Comparación detallada lado a lado de DG409DJ+ por Analog Devices y DG409CJ+ por Analog Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | DG409DJ+ | DG409CJ+ |
|---|---|---|
| Marca | Analog Devices | Analog Devices |
| Categoría | Interface ICs | Interface ICs |
| Estado del ciclo de vida | Activo | Activo |
| Product Type | Dual 4-channel CMOS analog multiplexer | — |
| Multiplexer Configuration | 4:1 | Dual 4:1 (8-channel or dual 4-channel) |
| Number of Circuits | 2 circuits | 2 circuits |
| Number of Channels per Circuit | 4 channels | — |
| On-Resistance | 100 ohm | — |
| Supply Voltage Range | 5 V to 30 V | 5 V to 30 V |
| Maximum Charge Injection | 15 pC | — |
| Input Off-Leakage Current | Less than 5 nA at 85 C | — |
| ESD Protection | Greater than 2000 V | — |
| Encapsulado | 16-pin PDIP | 16-pin DIP, 0.300 in (7.62 mm) lead pitch |
| Tipo de montaje | Through-hole | Through-hole |
| Signal Conduction Direction | Bidirectional | — |
| Control Logic Compatibility | TTL/CMOS-compatible | — |
| Channel Matching | 8 ohm maximum | 8 ohm maximum |
| Flatness Over Signal Range | 9 ohm maximum | — |
| Primary Applications | Audio-signal routing, communication systems, data acquisition, guidance and control systems, sample-and-hold circuits, test equipment | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| REACH Status | [DATA_NEEDED: REACH status] | [DATA_NEEDED: REACH status] |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Maximum On-Resistance | — | 100 ohm |
| Switching Time | — | 150 ns |
| Maximum Supply Voltage | — | 30 V |
| Off Leakage Current | — | 500 pA |
| On-Resistance Flatness | — | 9 ohm maximum |
| Switching Configuration | — | Single-pole single-throw, 4:1 |
| Transition Behavior | — | Break-before-make |
| Technology | — | CMOS |
| Maximum Power Dissipation | — | 842 mW |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification status] |