DRV8814PWPR vs DRV8804PWPR Comparación
Comparación detallada lado a lado de DRV8814PWPR por Texas Instruments y DRV8804PWPR por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
DRV8804PWPR - 65V 2.3A Quad Low-Side Driver | Texas Instruments
DRV8804PWPR ✓ ActivoComparación de especificaciones
| Parámetro | DRV8814PWPR | DRV8804PWPR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Motor Drivers | Motor Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,05 | $2,12 |
| Motor Type | Brushed DC (dual H-bridge) | — |
| Tensión de alimentación de funcionamiento | 8 V to 45 V | — |
| Absolute Maximum Supply Voltage | 47 V | — |
| Maximum Drive Current | 2.5 A per channel (at 24 V, TA = 25 °C) | — |
| Number of H-Bridges | 2 | — |
| Control Interface | Parallel (PHASE/EN) | SPI (daisy-chainable) |
| Current Control | 4-level winding current control | — |
| Decay Modes | Slow, fast, mixed | — |
| Inrush Protection | Yes (integrated) | — |
| Protection Features | OCP, TSD, UVLO, FLT pin reporting | — |
| Rango de temperatura de funcionamiento | -40 °C to +85 °C | — |
| Encapsulado | 28-HTSSOP (PWP) with PowerPAD, exposed thermal pad | HTSSOP-16 (PWP) with PowerPAD |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant (RoHS & no Sb/Br) | Compliant |
| Thermal Resistance (θJC) | approximately 31 °C/W (PowerPAD) | — |
| Number of Channels | — | 4 (low-side) |
| Output Current (per channel) | — | 1.5 A (single channel on, SOIC DW package) |
| Output Current (per channel, all on) | — | 800 mA (HTSSOP PWP package) |
| Peak Output Current | — | 2.3 A |
| Supply Voltage (VM) | — | 8.2 V to 60 V |
| Logic Supply Voltage (VDD) | — | 3.0 V to 5.5 V |
| RDS(on) (per FET) | — | 500 mΩ typical |
| Integrated Catch Diodes | — | Yes |
| Protección contra sobrecorriente | — | Yes (per channel) |
| Apagado térmico | — | Yes |
| Undervoltage Lockout | — | Yes |
| Temperatura de funcionamiento | — | -40 C to +125 C |