EP1C12F256C8 vs EP1C12F256C8N Comparación
Comparación detallada lado a lado de EP1C12F256C8 por Intel y EP1C12F256C8N por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP1C12F256C8 | EP1C12F256C8N |
|---|---|---|
| Marca | Intel | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $35,20 | $15,10 |
| Series | Cyclone | — |
| Family | Cyclone I | Cyclone I |
| Logic Elements (LE) | 12,060 | — |
| Total RAM Bits | 239,616 | — |
| Number of LABs/CLBs | 1,206 | — |
| Number of Logic Elements/Cells | 12,060 | — |
| Number of I/O | 185 | — |
| Number of PLLs | 2 | — |
| Total Memory Bits | 239,616 | 239,616 bits |
| Encapsulado / Carcasa | 256-BGA (FBGA) | — |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Temperatura de funcionamiento | 0°C to +85°C (commercial grade) | — |
| Core Voltage | 1.5 V | — |
| I/O Voltage Range | 1.5 V to 3.3 V | — |
| Supplier Device Package | 256-FBGA (17x17 mm) | — |
| Process Technology | 130 nm SRAM | 0.13-µm, all-layer copper SRAM |
| Configuration Method | Passive Serial / Active Serial / JTAG | Active Serial, Active Parallel, Passive Serial, JTAG |
| Logic Elements (LEs) | — | 12,060 |
| Embedded Memory Blocks | — | 52 M4K (4,608 bits each) |
| Maximum User I/Os | — | 185 |
| PLLs | — | 2 |
| Encapsulado | — | 256-ball FBGA (FineLine BGA), 17x17 mm, 1.0 mm pitch |
| Core Supply Voltage | — | 1.5 V |
| Speed Grade | — | C8 (commercial, -8) |
| Lead-Free / Pb-Free Suffix | — | Yes (N suffix) |
| Maximum Internal Operating Frequency | — | up to 275.03 MHz |
| Operating Temperature (commercial) | — | 0C to +85C |