EP1C6T14417N vs EP1C6T144I7N Comparación
Comparación detallada lado a lado de EP1C6T14417N por Intel y EP1C6T144I7N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP1C6T14417N | EP1C6T144I7N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $16,80 | $42,50 |
| Family | Cyclone | Cyclone (1st generation) |
| Logic Elements | 5,980 | 5,980 |
| Total RAM Bits | 92,160 | 92,160 |
| Embedded M4K RAM Blocks | 20 | — |
| Maximum User I/O Pins | 185 | — |
| PLLs | 2 | 2 |
| Global Clock Networks | 20 | — |
| LVDS Channels | 34 differential pairs (max) | — |
| Core Voltage (VCCINT) | 1.5 V (typical) | — |
| I/O Voltage (VCCIO) | 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Temperatura de funcionamiento | 0C to +85C (commercial) | -40 °C to +100 °C |
| Speed Grade | 7 (-7) | I7 (industrial, slowest) |
| Encapsulado | TQFP-144 (1.0 mm pitch) | 144-LQFP (TQFP-144) |
| Configuration Mode | Active Serial (AS) / Passive Serial (PS) / JTAG | — |
| Process Technology | 130 nm TSMC | 0.13 μm SRAM |
| Estado RoHS | Compliant | Compliant |
| Series | — | Cyclone |
| Logic Array Blocks (LABs) | — | 598 |
| Embedded RAM Blocks | — | 20 x M4K (4 Kbit each) |
| User I/O Pins | — | 98 |
| I/O Banks | — | 4 |
| Core Voltage | — | 1.5 V |
| I/O Voltage | — | 1.5 V to 3.3 V |
| Maximum LVDS Pairs | — | 64 |
| Tipo de montaje | — | Surface Mount |
| Configuration Modes | — | AS, PS, JTAG |
| Nivel MSL | — | 3 (168 hours) |