EP1K50TI144-1X vs EP1K50TI144-3N Comparación
Comparación detallada lado a lado de EP1K50TI144-1X por Intel y EP1K50TI144-3N por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP1K50TI144-1X | EP1K50TI144-3N |
|---|---|---|
| Marca | Intel | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10,95 | $19,80 |
| Family | ACEX 1K | ACEX 1K (EP1K) |
| Series | EP1K50 | EP1K50 |
| Device Type | FPGA (Field Programmable Gate Array) | — |
| Equivalent Gates | 50,000 | — |
| Logic Elements / Cells | 2,880 | — |
| Configurable Logic Blocks (CLBs) | 360 | — |
| Maximum User I/O Pins | 102 | — |
| Dedicated Input Pins | 6 | — |
| Number of Terminals | 144 | — |
| Package Code | QFP / TQFP-144 (Industrial) | — |
| Package Style | Low-profile Fine-pitch Quad Flat Pack (LFQFP / LQFP), 0.5 mm pitch | — |
| Terminal Form | Gull Wing | — |
| Supply Voltage (VCCINT) | 2.375 V to 2.625 V (nominal 2.5 V) | — |
| Frecuencia de reloj máxima | 90 MHz | — |
| Temperatura de funcionamiento | -40 C to +85 C (Industrial) | -40 °C to +85 °C (Industrial) |
| Configuration Method | Volatile SRAM, external configuration device required | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (Pb-free terminal finish, "N" suffix) |
| Speed Grade | -1 (slowest, lowest cost) | -3 (fastest ACEX 1K grade) |
| Design Toolchain | Quartus II (legacy support) | — |
| Logic Elements | — | 2,880 |
| Typical Gates | — | 50,000 |
| Embedded Array Blocks (EABs) | — | 40 (4 Kbit each) |
| Embedded Memory (EAB SRAM) | — | 40,960 bits |
| Maximum User I/O | — | 102 |
| Dedicated Inputs | — | 6 |
| Core Voltage (VCCINT) | — | 2.375 V to 2.625 V (nominal 2.5 V) |
| I/O Bank Voltage (VCCIO) | — | 2.375 V to 5.0 V (multiVolt I/O) |
| Maximum Internal Frequency | — | 166.67 MHz (process node data) |
| Process Technology | — | 0.22 µm CMOS, SRAM-based |
| Encapsulado | — | 144-pin TQFP (Industrial, Pb-free) |
| Configuration Interface | — | JTAG (IEEE 1149.1) + passive-serial |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Supply Current (typ/ICC) | — | [DATA_NEEDED: ICC standby] |