EP1S10F484C6N vs EP1S20F484C6N Comparación
Comparación detallada lado a lado de EP1S10F484C6N por Intel y EP1S20F484C6N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP1S10F484C6N | EP1S20F484C6N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $226,31 | $440,00 |
| Family | Stratix | Stratix |
| Logic Elements / Cells | 10,570 | — |
| Number of LABs / CLBs | 1,057 | — |
| Total RAM Bits | 920,448 | — |
| Number of User I/O | 335 | — |
| Encapsulado | 484-FBGA (23 × 23 mm, 1.0 mm pitch) | 484-Ball FCBGA (23 x 23 mm, 1.0 mm pitch) |
| Process Technology | 130 nm CMOS | 130 nm CMOS |
| Supply Voltage - Operating | 1.425 V to 1.575 V (core 1.5 V) | — |
| Speed Grade | C6 | 6 |
| Temperatura de funcionamiento | 0 °C to 85 °C (TJ) | 0 C to 85 C (Commercial) |
| Tipo de montaje | Surface Mount (SMT) | Surface Mount |
| Lead Free | Yes | — |
| Configuration Method | SRAM - volatile (JTAG / passive serial / passive parallel / fast passive parallel) | — |
| I/O Standards Supported | LVTTL, LVCMOS, PCI, SSTL, HSTL, LVDS | — |
| On-chip Resources | TriMatrix memory (M512, M4K, M-RAM), DSP blocks, PLLs | — |
| Logic Elements | — | 18,460 |
| Embedded Memory | — | 1,669,248 bits |
| DSP Blocks | — | [DATA_NEEDED: DSP block count] |
| User I/O Pins | — | 361 |
| Core Supply Voltage | — | 1.5 V |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O voltage - check datasheet] |
| Maximum Internal Clock | — | 450.05 MHz |
| Configuration Interface | — | JTAG (IEEE 1149.1), Serial/Parallel (AS/PS) - EPC device compatible |
| Estado RoHS | — | [DATA_NEEDED: confirm via Intel product page] |
| Lead-Free | — | [DATA_NEEDED: confirm] |