EP2AGX125EF29C4G vs EP2AGX125EF29C6G Comparación
Comparación detallada lado a lado de EP2AGX125EF29C4G por Intel y EP2AGX125EF29C6G por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Intel
EP2AGX125EF29C6G - Arria II GX FPGA, 125K LE, 8.3Mbit, 780-BGA | Intel
EP2AGX125EF29C6G ✓ ActivoComparación de especificaciones
| Parámetro | EP2AGX125EF29C4G | EP2AGX125EF29C6G |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1.100,00 | $1.495,00 |
| Family | Arria II GX | Arria II GX (40 nm) |
| Logic Elements | 118,143 | — |
| Number of LABs/CLBs | 4,964 | — |
| Total RAM Bits | 8,315,904 | — |
| Number of I/O | 372 | — |
| Number of Transceivers | 8 | — |
| Transceiver Data Rate | Up to 6.375 Gbps | Up to 6.375 Gbps |
| Voltage - Supply | 0.9 V (core) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | 0C to +85C (Commercial) | 0C to +85C (Commercial) |
| Encapsulado / Carcasa | 780-BBGA, FCBGA (29x29 mm, 1.0 mm pitch) | — |
| Speed Grade | C4 | 6 |
| Process Technology | 40 nm | — |
| Maximum Operating Frequency | 500 MHz | — |
| Estado RoHS | Compliant (G suffix = Pb-free) | Compliant |
| Series | — | Arria II GX |
| Logic Elements (LE) | — | 118,143 |
| Embedded Memory | — | 8,315,904 bits (8.3 Mbit) |
| User I/O Count | — | 372 |
| Number of Logic Array Blocks (LABs) | — | 372 (per DigiKey listing parameter) |
| Encapsulado | — | 780-BBGA, FCBGA (29 mm) |
| Supply Voltage Core | — | [DATA_NEEDED: VCCINT nominal] |
| Transceiver Count | — | Up to 8 multi-gigabit transceivers |
| Embedded Multipliers (18x18) | — | [DATA_NEEDED: exact count] |
| PLL Count | — | Up to 8 |
| Configuration Mode | — | FPP, AS, PS, JTAG |
| PCIe Hard IP | — | PCIe Gen1/Gen2 hard controllers |
| Process Node | — | 40 nm TSMC |
| Nivel MSL | — | 3 (per BGA moisture sensitivity norms) |