EP2C35U484C8 vs EP2C35U484I8 Comparación
Comparación detallada lado a lado de EP2C35U484C8 por Intel y EP2C35U484I8 por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2C35U484C8 | EP2C35U484I8 |
|---|---|---|
| Marca | Intel | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $92,40 | $55,00 |
| Series | Cyclone II | — |
| Family Name | Cyclone II | — |
| Logic Elements / Cells | 33,216 LE | — |
| Total RAM Bits | 483,840 bits (33216 cells) | — |
| Number of I/O | 322 user I/O | — |
| Number of Logic Blocks/Elements | 2,076 logic blocks | — |
| Number of Gates | [DATA_NEEDED: equivalent gate count] | — |
| Number of PLLs | 4 | — |
| Embedded Multipliers | 35 (18x18) | — |
| Package Type | 484-FBGA (UBGA-484), lead-free | — |
| Package Pin Count | 484 balls | — |
| Speed Grade | C8 (commercial, 8th tier) | I8 (industrial, 8th speed bin) |
| Core Voltage | 1.15 V to 1.25 V | — |
| Internal Frequency (max) | 500 MHz | — |
| Temperatura de funcionamiento | 0C to 85C (commercial) | — |
| Logic Family / Process | CMOS, 90 nm | — |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount (BGA) |
| Configuration Modes | JTAG, AS, PS, FPP | Passive Serial, Active Serial, JTAG |
| Nivel MSL | 3 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant (lead-free UBGA) | [DATA_NEEDED: RoHS compliance status] |
| Estado del ciclo de vida | Not Recommended for New Designs (NRND) | — |
| Family | — | Cyclone II |
| Logic Elements (LEs) | — | 33216 |
| Embedded Memory (bits) | — | 483840 |
| Embedded 18x18 Multipliers | — | 35 |
| Logic Array Blocks / LABs | — | 2076 |
| PLLs | — | 4 |
| Maximum User I/O | — | 322 |
| Encapsulado | — | 484-FBGA (U484, 19x19 mm FineLine BGA) |
| Process Technology | — | 90 nm low-power CMOS |
| Temperatura de unión de funcionamiento | — | -40C to +100C (industrial) |
| Supply Voltage (Core) | — | 1.2 V |
| Supply Voltage (I/O Banks) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |