EP2S180F1020C3 vs EP2S180F1020C5N Comparación
Comparación detallada lado a lado de EP2S180F1020C3 por Intel y EP2S180F1020C5N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2S180F1020C3 | EP2S180F1020C5N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1.280,00 | $4.100,00 |
| Series | Stratix II | — |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | — |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| Encapsulado | 1020-ball FBGA (flip-chip BGA) | 1020-BBGA, FCBGA (33x33 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | 1.15 V to 1.25 V (typ. 1.2 V) |
| Speed Grade | C3 | C5 (commercial) |
| Temperatura de funcionamiento | Commercial (0C to +85C) | 0C to +85C (commercial) |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | — |
| Development Toolchain | Quartus II / Quartus Prime | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (N suffix = lead-free) |
| Family | — | Stratix II |
| Logic Elements | — | 179400 |
| LABs/CLBs | — | 8970 |
| Total RAM Bits | — | 9383040 |
| User I/O | — | 742 |
| Supplier Device Package | — | 1020-FBGA (33x33) |
| Process Technology | — | 90 nm |
| Number of Terminals | — | 1020 (BGA ball grid) |
| Lead Free | — | Yes (Pb-free terminal finish) |
| Configuration | — | SRAM-based, JTAG / Active Serial |