EP2S180F1020I4 vs EP2S180F1020C3 Comparación
Comparación detallada lado a lado de EP2S180F1020I4 por Intel y EP2S180F1020C3 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2S180F1020I4 | EP2S180F1020C3 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $11.250,00 | $1.280,00 |
| Series | Stratix II | Stratix II |
| Family | Stratix II (EP2S180) | — |
| Logic Elements | 179,400 | — |
| Number of LABs/CLBs | 8,970 | — |
| Total RAM Bits | 9,383,040 (8,979,840 per alternate sources) | — |
| Number of I/O | 742 | — |
| Number of DSP Blocks | [DATA_NEEDED: DSP block count per Stratix II EP2S180 datasheet - typically 12] | — |
| Number of PLLs | [DATA_NEEDED: PLL count per EP2S180 datasheet] | — |
| Core Voltage (VCCINT) | 1.2 V | — |
| Process Technology | 90 nm CMOS | — |
| Maximum Operating Frequency | 711.24 MHz | — |
| Temperatura de funcionamiento | -40C to +100C (Industrial grade, "I4" suffix) | Commercial (0C to +85C) |
| Encapsulado | 1020-BBGA, FC-FBGA (Flip-Chip FineLine BGA) | 1020-ball FBGA (flip-chip BGA) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating from Altera packaging spec] | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Configuration Method | Passive serial, Active serial, Fast passive parallel, JTAG | SRAM-based (volatile, requires boot device) |
| Configuration Memory Type | SRAM (volatile; requires external configuration device) | — |
| Supplier Device Package | 1020-FBGA | — |
| Base Part Number | EP2S180 | — |
| Device Family | — | EP2S180 |
| Equivalent Logic Elements (LEs) | — | 179,400 |
| Logic Array Blocks (LABs) | — | 8,970 |
| Embedded Memory (RAM bits) | — | 9,383,040 |
| Maximum User I/Os | — | 742 |
| Process Node | — | 90 nm, all-layer copper SRAM |
| Core Voltage | — | 1.2 V |
| Speed Grade | — | C3 |
| DSP Blocks | — | Dedicated high-speed multipliers |
| Memory Interfaces Supported | — | DDR2 SDRAM, QDRII SRAM, RLDRAM II |
| I/O Standards | — | LVDS, LVPECL, SSTL, HSTL |
| Development Toolchain | — | Quartus II / Quartus Prime |