EP3SE260F1517C3N vs EP3SE260F1517I3 Comparación
Comparación detallada lado a lado de EP3SE260F1517C3N por Intel y EP3SE260F1517I3 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE260F1517C3N | EP3SE260F1517I3 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Última compra | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9.850,00 | $10.500,00 |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | — |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | — |
| PLLs | 4 | — |
| Global Clock Networks | 16 | — |
| Encapsulado | 1517-BBGA (FCBGA) | 1517-BBGA, FCBGA |
| Process Technology | 65 nm TSMC low-power CMOS | 65 nm CMOS |
| Speed Grade | C3 (commercial) | — |
| Temperatura de unión de funcionamiento | 0 C to +85 C (commercial) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Embedded Memory (bits) | — | 16,672,768 |
| Logic Array Blocks (LABs) | — | 10,200 |
| Maximum User I/Os | — | 976 |
| Operating Temperature Grade | — | Industrial |
| Junction Temperature Range | — | -40C to +125C |
| Core Voltage | — | 1.0 V typical |
| Maximum Core Frequency | — | 717 MHz |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Configuration | — | SRAM-based, volatile (requires external configuration device) |