EP3SE50F484C3 vs EP3SE50F484C3G Comparación
Comparación detallada lado a lado de EP3SE50F484C3 por Altera y EP3SE50F484C3G por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE50F484C3 | EP3SE50F484C3G |
|---|---|---|
| Marca | Altera | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $820,00 | $205,00 |
| Device Family | Stratix III E (Enhanced) | — |
| Logic Elements (LE) | 47,500 | — |
| Adaptive Logic Modules (ALM) | 19,000 | — |
| Embedded Memory (M9K + M144K) | 5,760 Kbits | — |
| DSP Blocks (18x18 multipliers) | 384 | — |
| User I/Os | 296 | — |
| User I/O Banks | [DATA_NEEDED: number of user I/O banks] | — |
| High-Speed Transceivers | [DATA_NEEDED: package-dependent count for 484-FBGA] | — |
| Internal Operating Frequency | Up to 800 MHz | — |
| Process Technology | 40 nm TSMC | — |
| Speed Grade | C3 (mid) | C3 |
| Temperatura de funcionamiento | 0C to 85C (Commercial) | 0C to +85C (commercial, "C") |
| Supply Voltage (Core) | [DATA_NEEDED: nominal core voltage] | — |
| Encapsulado | 484-ball FBGA (FineLine BGA) | 484-ball FCBGA (F484), 1.0 mm pitch |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration Modes | AS, PS, FPP, JTAG | — |
| Lead-Free / RoHS | [DATA_NEEDED: lead-free / RoHS status from manufacturer] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Family | — | Stratix III E |
| Logic Elements | — | 47,500 |
| Adaptive Logic Modules (ALMs) | — | 19,000 |
| Total Embedded Memory | — | 5,760,000 bits (5.76 Mbit) |
| M9K Memory Blocks | — | 320 (2,304 Kbits) |
| M144K Memory Blocks | — | 12 (1,728 Kbits) |
| User I/O Pins | — | 296 |
| 18x18 Multipliers | — | 384 |
| PLLs | — | 4 |
| Global Clock Networks | — | 16 |
| Process Node | — | 65 nm TSMC low-power |
| Core Voltage | — | 1.1 V |
| Estado RoHS | — | Compliant (lead-free) |