EP3SE50F780I4LG vs EP3SE110F780I4LN Comparación
Comparación detallada lado a lado de EP3SE50F780I4LG por Intel y EP3SE110F780I4LN por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE50F780I4LG | EP3SE110F780I4LN |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2.380,00 | $1.920,00 |
| Series | Stratix III E | Stratix III E |
| Family | Stratix III | — |
| Logic Elements | 47,500 | 107,500 |
| Adaptive Logic Modules (ALMs) | 19,000 | — |
| Embedded Memory | 5.49 Mbit | — |
| Maximum User I/Os | 488 | — |
| Encapsulado | 780-ball FCBGA (FBGA-780) | 780-BBGA, FCBGA (FBGA-780) |
| Operating Supply Voltage (Core) | 1.1 V | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -40 C to +100 C | — |
| Process Node | 65 nm | — |
| DSP Blocks | Yes (dedicated, count not in source data) | Yes (DSP-intensive architecture) |
| High-Speed Transceivers | Multi-gigabit, count not in source data | — |
| Lead-Free / RoHS | Yes (G suffix = Pb-free) | — |
| Packaging | Tray | — |
| Tipo de memoria | Embedded SRAM block RAM | — |
| Logic Array Blocks (LABs) | — | 4,300 |
| Total Memory Bits | — | 8,936,448 |
| User I/O Count | — | 488 |
| Core Voltage | — | 0.9 V |
| Maximum Operating Frequency | — | 717 MHz |
| Temperatura de funcionamiento | — | -40C to +100C (Industrial) |
| Lead-Free / RoHS Status | — | Lead-free / RoHS compliant |
| Process Technology | — | 40 nm CMOS |
| Transceivers | — | Multi-gigabit embedded transceivers |
| Embedded Memory Type | — | M20K + MLAB |