EP3SE80F780C4N vs EP3SE50F780C4N Comparación
Comparación detallada lado a lado de EP3SE80F780C4N por Intel y EP3SE50F780C4N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE80F780C4N | EP3SE50F780C4N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1.290,00 | $1.430,00 |
| Device Family | Stratix III E | — |
| Logic Elements | 80,000 | — |
| Logic Array Blocks (LABs) | 3,200 | — |
| User I/Os | 488 | — |
| Embedded Memory (bits) | 6,843,392 | — |
| Process Technology | 65 nm | — |
| Core Voltage | 0.9 V | — |
| I/O Voltage | 1.1 V | — |
| Encapsulado | 780-ball FC-FBGA (FineLine BGA) | 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch |
| Pin/Package Code | F780 | — |
| Speed Grade | C4 (commercial) | — |
| Internal Frequency (max) | [DATA_NEEDED: internal max frequency per datasheet] | — |
| Temperatura de funcionamiento | 0 C to 85 C (commercial) | 0C to +85C (C4 commercial grade) |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Configuration Method | Serial/Parallel (Quartus II) | — |
| Estado RoHS | Compliant | Lead-free / RoHS compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 3 (per JEDEC J-STD-020, FBGA package) |
| Family | — | Stratix III E |
| Logic Elements (LE) | — | 47,500 |
| Embedded Memory Bits | — | 5,760,000 |
| Embedded Memory (M9K/M144K blocks) | — | 488 (per family datasheet) |
| Number of LABs | — | 1900 |
| Maximum User I/Os | — | 488 |
| DSP Blocks (18x18 multipliers) | — | 432 |
| PLLs | — | 12 (per family datasheet) |
| Maximum Operating Frequency | — | 717 MHz |
| Transceiver Channels | — | Up to 12 (per family, model-dependent) |
| Transceiver Data Rate | — | Up to 6.375 Gbps (per Stratix III E family) |
| Process Node | — | 40 nm |
| Tensión de alimentación | — | Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) |
| Configuration Modes | — | JTAG, Passive Serial, Fast Passive Parallel |
| Hard Memory Controller | — | DDR2/DDR3 SDRAM (per Stratix III E family) |