EP4CGX110DF23I7N vs EP4CGX110DF27C8 Comparación
Comparación detallada lado a lado de EP4CGX110DF23I7N por Intel y EP4CGX110DF27C8 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CGX110DF23I7N | EP4CGX110DF27C8 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $182,00 | $225,40 |
| Family | Cyclone IV GX | — |
| Logic Elements | 109,424 | — |
| Logic Array Blocks (LABs) | 6,839 | — |
| User I/O Pins | 270 | — |
| Embedded Memory | 4.4 Mbits (approximate) | — |
| Embedded 18x18 Multipliers | 56 | — |
| Transceivers | Up to 3.125 Gbps embedded transceivers | — |
| Core Supply Voltage (VCCINT) | 1.15 V to 1.25 V (nominal 1.2 V) | — |
| Process Technology | 60 nm low-power CMOS | 60 nm |
| Temperatura de funcionamiento | -40C to +100C (industrial) | 0C to +85C (commercial) |
| Speed Grade | 7 | — |
| Encapsulado | 484-ball FBGA, 23 x 23 mm, 1.00 mm pitch | — |
| Package Code | BGA (FBGA) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | — |
| Configuration Memory | SRAM-based (volatile, requires external config device) | — |
| Device Type | — | FPGA - Field Programmable Gate Array |
| Series | — | Cyclone IV GX |
| Logic Elements / Cells | — | 109,424 |
| Total RAM Bits | — | 5,621,760 |
| Number of Logic Blocks / LABs | — | 11,144 |
| Number of I/O | — | 393 |
| Number of Transceivers | — | 8 |
| Transceiver Data Rate | — | 3.125 Gbps |
| Number of Multipliers (18x18) | — | 562 |
| Supply Voltage - Core | — | 1.2 V |
| Encapsulado / Carcasa | — | 672-FBGA |
| Nivel de sensibilidad a la humedad (MSL) | — | 3 (168 hours) |