EP4CGX150DF31I7NAD vs EP4CGX110DF31I7N Comparación
Comparación detallada lado a lado de EP4CGX150DF31I7NAD por Altera y EP4CGX110DF31I7N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EP4CGX150DF31I7NAD - Cyclone IV GX FPGA 149K LEs | Altera | 896-BGA
EP4CGX150DF31I7NAD ✓ Activo
Comparación de especificaciones
| Parámetro | EP4CGX150DF31I7NAD | EP4CGX110DF31I7N |
|---|---|---|
| Marca | Altera | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $372,40 | $192,40 |
| Family | Cyclone IV GX | Cyclone IV GX |
| Logic Elements | 149,760 | — |
| Logic Array Blocks (LABs) | 9,360 CLBs | — |
| Embedded Memory Bits | 6,635,520 bits | — |
| Embedded Memory Blocks (M9K) | 720 | — |
| Embedded 18x18 Multipliers | 720 | — |
| Transceiver Channels | 8 (up to 3.125 Gbps) | — |
| PCI Express Hard IP Blocks | 2 | — |
| Maximum User I/O Pins | 475 | — |
| Encapsulado | 896-ball FineLine BGA (FBGA-896), 31 mm, 1.0 mm pitch | FBGA-896 (31x31 mm) |
| Speed Grade | 7 (industrial, -40C to +100C junction) | — |
| Temperatura de unión de funcionamiento | -40C to +100C | — |
| Core Voltage VCCINT | 1.0 V or 1.2 V (transceiver-dependent) | — |
| PLL Analog Voltage VCCA | 2.5 V | — |
| I/O Bank Voltage VCCIO | 1.2 V to 3.3 V (banked) | — |
| Configuration Modes | AS, PS, FPP, JTAG | JTAG, AS, PS, FPP |
| Bitstream Encryption | AES-256 | — |
| Estado RoHS | Compliant (Pb-free) | Compliant |
| Ordering Code Suffix | AD (Pb-free tray) | — |
| Logic Elements (LE) | — | 109,424 |
| Logic Blocks / ALMs | — | 47 (ALM-adaptive logic modules) |
| Embedded Memory | — | 5,621,760 bits (5.49 Mbit) |
| Embedded Multipliers | — | 270 (18x18) |
| User I/Os | — | 475 |
| Transceivers | — | Up to 8 channels, 3.125 Gbps |
| PCIe Hard IP | — | Yes, Gen1 (x1/x2/x4) |
| Process Technology | — | 60 nm low-power CMOS |
| Core Supply Voltage | — | 1.2 V |
| Tipo de montaje | — | Surface Mount |
| Temperatura de funcionamiento | — | -40C to +100C (Industrial) |
| Packaging | — | Tray |