EP4CGX75DF27C7N vs EP4CGX75DF27I6N Comparación
Comparación detallada lado a lado de EP4CGX75DF27C7N por Intel y EP4CGX75DF27I6N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CGX75DF27C7N | EP4CGX75DF27I6N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $96,40 | $65,00 |
| Family | Cyclone IV GX | Cyclone IV GX |
| Series | Cyclone IV | — |
| Logic Elements (LE) | 73,920 | 73,920 |
| Number of Logic Blocks / CLBs | 4620 CLBs / 47 logic blocks (reported) | — |
| Total Memory Bits | 4,257,792 bits | — |
| Number of I/O | 310 | — |
| Tensión de alimentación | 1.2 V (core) | — |
| Number of Transceivers | Up to 8 (3.125 Gbps) | — |
| Encapsulado | 672-FBGA (27 x 27 mm, 1.0 mm pitch) | FBGA-672 (FineLine BGA) |
| Tipo de montaje | Surface Mount (BGA) | — |
| Temperatura de funcionamiento | 0C to +85C (commercial, C7 suffix) | — |
| Operating Frequency (max) | 472.5 MHz | — |
| Lead-Free | Yes | Yes |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Process Technology | 60 nm low-power | — |
| Transceiver Data Rate (max) | 3.125 Gbps | — |
| Embedded Multipliers | [DATA_NEEDED: 18 x 18 multiplier count] | — |
| Configuration Method | SRAM-based, JTAG / AS / PS modes | — |
| Design Software | Quartus II (Cyclone IV support) | — |
| Device Model | — | EP4CGX75 |
| Logic Array Blocks (LABs) | — | [DATA_NEEDED: LAB count] |
| Embedded Memory Bits | — | 4,257,792 |
| Embedded Memory Blocks | — | M9K (9 Kbit) |
| Maximum User I/O | — | 310 |
| Transceivers | — | Up to 8 channels |
| Transceiver Data Rate | — | Up to 3.125 Gbps |
| PLLs | — | [DATA_NEEDED: total PLL count] |
| Hard PCIe Blocks | — | x1 / x2 Gen1 |
| Process Node | — | 60 nm |
| Core Voltage (VCCINT) | — | 1.2 V |
| Pin / Ball Count | — | 672 |
| Operating Temperature (I6N suffix) | — | -40C to +100C (industrial) |
| Configuration Modes | — | JTAG, Serial, Parallel |