EPF10K200SBC600-1 vs EPF10K200SFC484-1N Comparación
Comparación detallada lado a lado de EPF10K200SBC600-1 por Intel y EPF10K200SFC484-1N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Intel
EPF10K200SBC600-1 - 200K Gate FLEX-10KS FPGA, 470 I/O | Intel / Altera
EPF10K200SBC600-1 ObsoleteIntel
EPF10K200SFC484-1N - FLEX-10KE FPGA 200K Gates 484-FBGA | Intel
EPF10K200SFC484-1N ⚠ Última compraComparación de especificaciones
| Parámetro | EPF10K200SBC600-1 | EPF10K200SFC484-1N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $425,00 | $185,25 |
| Family | FLEX-10KS | FLEX-10KS |
| Series | EPF10K200 | FLEX-10KE |
| Logic Elements / Cells | 9,984 | — |
| Gate Count (typical) | 200,000 gates | — |
| Logic Array Blocks (LABs) | 1,248 | 1,248 |
| Number of User I/Os | 470 | — |
| Number of Logic Cells | 4,992 | — |
| Embedded RAM (bits) | 24,576 (across EABs) | — |
| Max Internal Frequency | 250 MHz | — |
| Propagation Delay | 0.4 ns | — |
| Process Technology | 0.22 µm CMOS | 0.22 µm CMOS |
| Core Supply Voltage (VCCINT) | 2.375 V to 2.625 V (typ. 2.5 V) | — |
| Speed Grade | -1 (fastest commercial) | -1 (fastest) |
| Temperatura de funcionamiento | 0 °C to 70 °C (Commercial) | 0 °C to +70 °C (Commercial) |
| Encapsulado | 600-ball BGA, 45 × 45 mm, 1.27 mm pitch | 484-FBGA (FineLine BGA), 23 x 23 mm, 1.0 mm pitch |
| Tipo de montaje | Surface Mount | Surface Mount |
| JTAG Support | IEEE Std 1149.1 | — |
| Configuration | Serial via EPC2/EPC8 configuration devices | — |
| Estado RoHS | Non-compliant (per third-party listing) | Compliant |
| Logic Elements | — | 9,984 |
| System Gates | — | 200,000 |
| Embedded Memory (EAB) | — | 98,304 bits |
| User I/Os | — | 369 |
| Core Voltage | — | 2.5 V |
| Maximum Internal Frequency | — | 250 MHz |
| Pin-to-Pin Delay | — | 0.3 ns |
| Configuration Method | — | SRAM (volatile) - IEEE 1149.1 JTAG |