EPF10K20RC240-3N vs EPF10K20RI240-4 Comparación
Comparación detallada lado a lado de EPF10K20RC240-3N por Altera y EPF10K20RI240-4 por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EPF10K20RC240-3N | EPF10K20RI240-4 |
|---|---|---|
| Marca | Altera | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $23,10 | $18,75 |
| Series | FLEX 10K | EPF10K20 |
| Family | Embedded Programmable Logic Device (EPLD) | FLEX 10K |
| Logic Cells / Elements | 1152 | — |
| Total Gates | 20,000 (typical usable) | — |
| Logic Capacity (typical) | 12,888 | — |
| Logic Array Blocks (LABs) | 144 | 144 |
| User I/O Pins | 189 | — |
| Embedded Array Blocks (EABs) | 6 (per family architecture) | — |
| Número de pines | 240 | — |
| Package Type | 240-RQFP (HFQFP, exposed pad) | 240-BFQFP / 240-RQFP with exposed pad |
| Package Code | HFQFP / RQFP | — |
| Tipo de montaje | Surface Mount (gull wing) | Surface Mount |
| Tensión de alimentación | 5 V | — |
| Technology / Process | 0.42 µm CMOS | — |
| Maximum Internal Frequency | 125 MHz | — |
| Propagation Delay | 0.4 ns (typical) | — |
| Speed Grade | -3 | — |
| Temperatura de funcionamiento | 0 °C to +70 °C (commercial) | — |
| Programming Interface | JTAG (IEEE 1149.1), ByteBlaster / MasterBlaster / ByteBlasterMV | — |
| Configuration Memory | SRAM (volatile, re-programmable) | SRAM (volatile, external config device required) |
| Estado RoHS | [DATA_NEEDED: RoHS compliance] | Non-compliant (legacy 5 V process) |
| Lead-Free | [DATA_NEEDED: lead-free status] | Contains lead (legacy) |
| Logic Elements / Cells | — | 1,152 |
| Total RAM Bits | — | 12,288 |
| Number of Gates | — | 20,000 (typical) |
| User I/O Count | — | 189 |
| Number of Embedded Array Blocks (EABs) | — | [DATA_NEEDED: number of EABs] |
| Maximum Operating Frequency | — | 125 MHz |
| Core Supply Voltage | — | 5 V |
| I/O Supply Voltage | — | 5 V |
| Process Technology | — | 0.42 µm CMOS (SRAM) |
| Operating Temperature Grade | — | Industrial |