EPF10K250EGC599-3 vs EPF10K200EGC599-3 Comparación
Comparación detallada lado a lado de EPF10K250EGC599-3 por Altera y EPF10K200EGC599-3 por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EPF10K250EGC599-3 - 250K Gate FLEX 10KE FPGA, 599-PGA | Intel
EPF10K250EGC599-3 ⚠ Última compraAltera
EPF10K200EGC599-3 - FLEX 10KE 200K FPGA, 599-BCPGA | Altera
EPF10K200EGC599-3 ⚠ Última compraComparación de especificaciones
| Parámetro | EPF10K250EGC599-3 | EPF10K200EGC599-3 |
|---|---|---|
| Marca | Altera | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Última compra | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $135,00 | $39,20 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | 9984 |
| Typical Gates | 250,000 | — |
| Embedded Memory (Bits) | 409,600 | — |
| Embedded Array Blocks (EABs) | 12 | — |
| Maximum User I/O | 470 | 470 |
| Encapsulado | 599-pin PGA (HIPGA / Heat-dissipating PGA) | 599-BCPGA (62.48 x 62.48 mm) |
| Package Pin Count | 599 | — |
| Speed Grade | -3 | -3 (0.8 ns) |
| Operating Temperature Grade | Commercial (0C to +70C) | Commercial |
| Core Voltage | 3.3 V | — |
| I/O Voltage Support | 3.3 V / 2.5 V / 1.8 V (MultiVolt) | — |
| Process Technology | 0.22 micron CMOS, SRAM-based configuration | 0.22 µm SRAM CMOS |
| Configuration Method | Serial or parallel, SRAM configuration cell | — |
| Tipo de montaje | Through-hole PGA | Through Hole (Pin/Peg) |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Terminal Form | PIN/PEG | — |
| Manufacturer | — | Altera (Intel) |
| Series | — | FLEX-10KE |
| Device Type | — | FPGA (Field Programmable Gate Array) |
| System Gates | — | 200000 (approx.) |
| Total RAM Bits | — | 98304 |
| Number of Terminals | — | 599 |
| Package Code | — | PGA (Ceramic Pin Grid Array) |
| Core Supply Voltage | — | 2.375 V to 2.625 V (typical 2.5 V) |
| Maximum Frequency | — | 166.67 MHz |
| Propagation Delay | — | 0.8 ns |
| Programming Interface | — | JTAG (IEEE 1149.1) |
| Configuration Memory | — | SRAM-based (volatile) |