GX36420-F-DNT vs GX36420 Comparación
Comparación detallada lado a lado de GX36420-F-DNT por Renesas Electronics y GX36420 por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
GX36420-F-DNT - 64Gbps Linear Quad TIA | Renesas Electronics
GX36420-F-DNT ✓ ActivoRenesas Electronics
GX36420 - 64 Gbps Quad Linear TIA for 400G/600G Coherent | Renesas
GX36420 ✓ ActivoComparación de especificaciones
| Parámetro | GX36420-F-DNT | GX36420 |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | RF Amplifiers | Amplifier ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $359,00 | $92,40 |
| Product Type | Linear Transimpedance Amplifier (TIA) | — |
| Data Rate per Lane | 64 Gbps | — |
| Number of Channels | 4 (XI, XQ, YI, YQ) | 4 (quad: XI, XQ, YI, YQ) |
| Target Application | 400G/600G coherent optical receivers | 400G / 600G coherent optical receivers |
| Tipo de salida | Linear (unlimited amplitude) | — |
| Integrated Digital Interface | Yes, on-die DC control interface | — |
| Integration | 4 TIA lanes + digital control on single die | — |
| Manufacturer | Renesas Electronics (formerly IDT) | — |
| Encapsulado | [DATA_NEEDED: package] | — |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC / VEE] |
| Power Dissipation | [DATA_NEEDED: power dissipation] | — |
| Transimpedance Gain | [DATA_NEEDED: transimpedance gain] | [DATA_NEEDED: gain (kOhm)] |
| Bandwidth | [DATA_NEEDED: bandwidth] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (assumed; bare die) |
| Tipo de montaje | [DATA_NEEDED: mounting type] | — |
| Device Type | — | Linear Transimpedance Amplifier (TIA) |
| Per-Lane Data Rate | — | 64 Gbps (symbol rate, NRZ/PAM) |
| Aggregate Bandwidth | — | 256 Gbps (4 x 64 Gbps) |
| Topología | — | Linear (preserves amplitude for coherent ADC) |
| Output Interface | — | Differential, per lane |
| Integrated DC Control | — | Yes (on-die digital control interface) |
| Form Factor | — | Bare die (DNT = die, no package) |
| Process Technology | — | SiGe BiCMOS |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Input-Referred Noise | — | [DATA_NEEDED: input noise current (pA/sqrt(Hz))] |
| Nivel MSL | — | In-pack die / wafer |