H5ANAG8NCR-VKC vs H5ANAG8NCMR-VKC Comparación
Comparación detallada lado a lado de H5ANAG8NCR-VKC por SK hynix y H5ANAG8NCMR-VKC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG8NCR-VKC | H5ANAG8NCMR-VKC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $28,13 | $8,05 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | [DATA_NEEDED: organization (e.g. 2G x8)] | 2G x 8 |
| Tamaño de memoria | 16 Gbit | 16 Gb |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Nominal Supply Voltage | 1.2 V | — |
| Max Data Rate | [DATA_NEEDED: Mbps per pin for VKC grade] | — |
| Temperatura de funcionamiento | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Encapsulado | FBGA-78 | FBGA-78 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes | — |
| On-Chip Termination | Dynamic ODT | — |
| Reset Function | Asynchronous reset | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC / CA Parity | Yes | — |
| Auto Precharge | Yes | — |
| Standby Current | [DATA_NEEDED: IDD current spec] | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Velocidad de datos | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade | — | VK (per SK hynix speed-bin suffix) |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| Latencia CAS | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |