H5ANAG8NCR-VKC vs H5ANAG8NCMR-VKI Comparación
Comparación detallada lado a lado de H5ANAG8NCR-VKC por SK hynix y H5ANAG8NCMR-VKI por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG8NCR-VKC | H5ANAG8NCMR-VKI |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $28,13 | $0,00 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | [DATA_NEEDED: organization (e.g. 2G x8)] | x8 |
| Tamaño de memoria | 16 Gbit | 16 Gb |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Nominal Supply Voltage | 1.2 V | — |
| Max Data Rate | [DATA_NEEDED: Mbps per pin for VKC grade] | — |
| Temperatura de funcionamiento | 0C to +85C | [DATA_NEEDED: operating temperature] |
| Encapsulado | FBGA-78 | — |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes | — |
| On-Chip Termination | Dynamic ODT | — |
| Reset Function | Asynchronous reset | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC / CA Parity | Yes | — |
| Auto Precharge | Yes | — |
| Standby Current | [DATA_NEEDED: IDD current spec] | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Velocidad de datos | — | 2666 Mbps per pin |
| Technology | — | CMOS, volatile DRAM |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD] |
| Package Type | — | [DATA_NEEDED: package] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency] |
| Refresh (tREFI) | — | [DATA_NEEDED: refresh interval] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| Product Status | — | Active |
| Clocking | — | Differential clock (CK / CK#), fully synchronous |
| On-Die Termination | — | Yes (ODT) |