HI5812JIBZ-T vs ISLA212P20IRZ Comparación
Comparación detallada lado a lado de HI5812JIBZ-T por Renesas Electronics y ISLA212P20IRZ por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
HI5812JIBZ-T - 12-bit, 50kSPS SAR ADC | Renesas / Intersil
HI5812JIBZ-T ✓ Activo
Comparación de especificaciones
| Parámetro | HI5812JIBZ-T | ISLA212P20IRZ |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | ADC/DAC | ADC/DAC |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,95 | $19,55 |
| Resolución | 12 bits | — |
| Architecture | SAR (Successive Approximation Register) with internal Track-and-Hold | SAR |
| Number of Input Channels | 1 single-ended | — |
| Frecuencia de muestreo | 50 kSPS (max) | — |
| Conversion Time | 20 us (max at 5 V supply) | — |
| Data Interface | Parallel | Serial, SPI (configuration); LVDS or CMOS (data) |
| Supply Voltage (VDD) | 3 V to 6 V (single supply) | — |
| Supply Current (typ. at 5 V) | 1.9 mA | — |
| Input Type | Single-ended analog input | Single-ended / differential (femtoCharge™ switched-cap) |
| Encapsulado / Carcasa | 24-SOIC (0.295 inch / 7.50 mm width) | 72-VFQFN Exposed Pad, 10 mm x 10 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40 C to +85 C | -40 °C to +85 °C |
| Power Dissipation (max) | 25 mW | — |
| Packaging | Tape and Reel (TR) | Tray |
| Estado RoHS | Compliant | Compliant |
| Number of Bits | — | 12 |
| Sampling Rate (Per Second) | — | 200 MSPS |
| Number of Inputs | — | 1 |
| Supply Voltage (Analog) | — | [DATA_NEEDED: analog supply voltage] |
| Supply Voltage (Digital) | — | [DATA_NEEDED: digital supply voltage] |
| Output Format | — | LVDS or CMOS, SDR or DDR |
| Configuration Port | — | SPI |
| Power Consumption | — | [DATA_NEEDED: total power at 200 MSPS] |
| Process Technology | — | Standard CMOS with proprietary FemtoCharge™ sampling |