IAUC100N04S6L025ATMA1 vs BSC076N06NS3GATMA1 Comparación
Comparación detallada lado a lado de IAUC100N04S6L025ATMA1 por Infineon y BSC076N06NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 ✓ ActivoInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC100N04S6L025ATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,65 |
| Technology | OptiMOS 6 40V trench MOSFET | N-Channel Trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | 50 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 3.5 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| RoHS Compliance | — | Compliant |
| Sin halógenos | — | Yes (per Infineon product page) |