IAUC120N04S6L009ATMA1 vs IAUC120N04S6N009ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N04S6L009ATMA1 por Infineon y IAUC120N04S6N009ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ ActivoInfineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N04S6L009ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $1,60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 150 A (per datasheet header) | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | — |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | 150 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 °C to +175 °C |
| Encapsulado | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| AEC-Q101 Automotive Qualification | Yes | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Corriente de drenador pulsada | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Automotive Qualification | — | AEC-Q101 |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |