IAUC120N04S6N009ATMA1 vs IAUC120N06S5N011ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N04S6N009ATMA1 por Infineon y IAUC120N06S5N011ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ ActivoInfineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N04S6N009ATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,60 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 120 A | — |
| Corriente de drenador pulsada | [DATA_NEEDED: pulsed I_D value] | — |
| R_DS(on) max @ V_GS=10V | 0.9 mΩ | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | — |
| Power Dissipation (Tc) | 150 W | — |
| Thermal Resistance R_thJC max | 1.0 K/W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | — |
| Product Family | — | OptiMOS-5 |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 120 A (Tc=25°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | — | 310 A (Tj) |
| On-Resistance Rds(on) max | — | 1.1 mΩ at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | — | 188 W (Tc=25°C) |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (Tj) |
| RoHS Compliance | — | Compliant |