IAUC120N06S5N032ATMA1 vs IPC50N04S5L5R5ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5N032ATMA1 por Infineon y IPC50N04S5L5R5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N032ATMA1 ✓ ActivoInfineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5N032ATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $0,36 |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Power Dissipation (PD) at TC=25C | 94 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.2 mOhm | — |
| Gate Charge (Qg) typ | 47 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | OptiMOS-5 N-Channel | — |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) | -55 °C to +175 °C |
| Encapsulado | PG-TDSON-8-34 (SSO8 5x6 mm) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Tipo de montaje | Surface Mount (Tape and Reel) | Surface Mount |
| Recuento de pines | 8 | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Gate Resistance (Rg) | [DATA_NEEDED: Rg] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) | — |
| Lead-Free | Yes | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |