IAUC50N08S5N102ATMA1 vs IAUC120N06S5L015ATMA1 Comparación
Comparación detallada lado a lado de IAUC50N08S5N102ATMA1 por Infineon y IAUC120N06S5L015ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC50N08S5N102ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,51 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 50 A | — |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Total Gate Charge (Qg) | 21 nC @ 10 V | — |
| Input Capacitance (Ciss) | 1394 pF @ 40 V | — |
| Power Dissipation (PD) at TC=25°C | 60 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C | -55C to +175C (Tj) |
| Encapsulado / Carcasa | PG-TDSON-8-33 | — |
| Tipo de montaje | Surface Mount | Surface Mount (exposed pad) |
| Qualification | AEC-Q101 | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Technology | — | N-Channel MOSFET (OptiMOS 5) |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Encapsulado | — | PG-TDSON-8-43 (Surface Mount) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |