IAUC60N04S6N044ATMA1 vs IAUC100N04S6L014ATMA1 Comparación
Comparación detallada lado a lado de IAUC60N04S6N044ATMA1 por Infineon y IAUC100N04S6L014ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ ActivoInfineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC60N04S6N044ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,98 | $0,72 |
| Technology | OptiMOS-6 N-channel trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Encapsulado | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited) | 1 |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC / OptiMOS 6 40V |
| Tipo de transistor | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| AEC-Q101 Qualification | — | Yes |
| Packaging | — | Tape & Reel (ATMA1 suffix) |