IAUCN04S7L050HATMA1 vs IAUC100N04S6N028ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7L050HATMA1 por Infineon y IAUC100N04S6N028ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActivoInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7L050HATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,83 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS 6 40V |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8 (TDSON-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | — |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | MOSFET (Metal Oxide) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes |