IAUCN04S7N037GATMA1 vs IAUCN04S6N013TATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N037GATMA1 por Infineon y IAUCN04S6N013TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ ActivoInfineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N037GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $1,66 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Technology | Trench MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Encapsulado | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-LHDSO-10-1 (SSO10T) |
| Tipo de montaje | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: junction/ambient temperature limits] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | — | 1.32 mΩ at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | — | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | — | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 51 pF |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |