IAUCN08S7L033ATMA1 vs IAUC100N10S5L054ATMA1 Comparación
Comparación detallada lado a lado de IAUCN08S7L033ATMA1 por Infineon y IAUC100N10S5L054ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IAUCN08S7L033ATMA1 | IAUC100N10S5L054ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $1,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | OptiMOS 5 (IAUC automotive family) |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ) | -55°C to +175°C |
| Encapsulado | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-34 (surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | AEC-Q101 (automotive) |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 5 trench |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020, typical for this package) | [DATA_NEEDED: MSL rating] |
| Drain-to-Source Voltage (V_DS) | — | 100 V |
| Gate-to-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS value] |
| Continuous Drain Current (I_D, Tj) | — | 101 A |
| Power Dissipation (P_D, Tc) | — | 130 W |
| R_DS(on) max at V_GS=10V | — | 5.4 mΩ |