IAUT300N08S5N012ATMA2 vs ISC080N10NM6ATMA1 Comparación
Comparación detallada lado a lado de IAUT300N08S5N012ATMA2 por Infineon y ISC080N10NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUT300N08S5N012ATMA2 | ISC080N10NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,20 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V | OptiMOS™ 6 100V |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | -55°C to +175°C (TJ max, per datasheet) |
| Encapsulado | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8 FL (TDSON EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, per datasheet) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |