IAUZ18N10S5L420ATMA1 vs BSC0901NSIATMA1 Comparación
Comparación detallada lado a lado de IAUZ18N10S5L420ATMA1 por Infineon y BSC0901NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUZ18N10S5L420ATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,38 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 100V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | — |
| Total Gate Charge (Qg) typ. | 8.5 nC | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Technology | OptiMOS 5 trench | OptiMOS 25V N-Channel Power MOSFET |
| Configuration | Single with built-in diode | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10V | — | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.2 V max |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 69 W |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C |
| Recuento de pines | — | 8 |
| Sin halógenos | — | Yes |