IAUZN04S7L025ATMA1 vs IAUCN04S7N027GATMA1 Comparación
Comparación detallada lado a lado de IAUZN04S7L025ATMA1 por Infineon y IAUCN04S7N027GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon
IAUZN04S7L025ATMA1 ✓ ActivoInfineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUZN04S7L025ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $0,72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | — |
| Continuous Drain Current (ID) at TC=25C | 117 A | — |
| Continuous Drain Current (ID) at TA | 60 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| RDS(on) Max at VGS=10V | 2.56 mΩ | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at TC=25C | 65 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | PG-TSDSON-8-44 (S3O8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL] |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| Encapsulado / Carcasa | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | — | Automotive |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Estado RoHS | — | Compliant |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |