IDTADC1210S080HN-C1 vs ADC1213S080HN-C18 Comparación
Comparación detallada lado a lado de IDTADC1210S080HN-C1 por Renesas Electronics y ADC1213S080HN-C18 por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
IDTADC1210S080HN-C1 - 12-Bit 80MSPS ADC, CMOS/LVDS DDR | Renesas
IDTADC1210S080HN-C1 ObsoleteRenesas Electronics
ADC1213S080HN-C18 - 12-Bit 80MSPS Single-Channel ADC | Renesas
ADC1213S080HN-C18 ✓ ActivoComparación de especificaciones
| Parámetro | IDTADC1210S080HN-C1 | ADC1213S080HN-C18 |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | ADC/DAC | ADC/DAC |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,85 | $9,45 |
| Resolución | 12 bit | 12 bits |
| Number of Channels | 1 | 1 |
| Frecuencia de muestreo | 80 MSPS | — |
| Architecture | Pipelined | — |
| Input Type | Differential/Single-ended analog input | — |
| Analog Supply Voltage (VDDA) | 3.0 V (typical) | — |
| Digital Supply Voltage (VDDO) | 1.8 V (typical) | — |
| Digital Output Mode | CMOS or LVDS DDR (selectable) | — |
| Rango de temperatura de funcionamiento | -40 C to +85 C | — |
| Encapsulado | 40-pin HVQFN (6x6 mm) with exposed thermal pad | HVQFN-32 (5x5 mm) with exposed thermal pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Converter Type | Data Acquisition / ADC | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Datasheet Revision | Rev. 03, 2 July 2012 | — |
| Input Common-Mode Range | [DATA_NEEDED: VCM range] | — |
| Maximum Sample Rate | — | 80 MSPS |
| Output Interface | — | Serial JESD204A (1 lane) |
| Analog Supply Voltage (AVDD) | — | 1.8 V |
| Digital / IO Supply (OVDD) | — | 1.8 V to 3.3 V |
| Analog Input Type | — | Differential, on-chip buffer |
| Analog Input Bandwidth | — | 1 GHz |
| SNR (typical, fIN near Nyquist) | — | 70 dBFS |
| SFDR (typical) | — | 78 dBc |
| Power Dissipation (typical, 80 MSPS) | — | 130 mW |
| Power-Down Mode | — | Yes (SPI-controlled) |
| Configuration Interface | — | SPI / serial control |
| Temperatura de funcionamiento | — | -40 C to +85 C |
| Nivel MSL | — | 3 |