IGD08N120S7ATMA1 vs IGD06N60TATMA1 Comparación
Comparación detallada lado a lado de IGD08N120S7ATMA1 por Infineon y IGD06N60TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IGD08N120S7ATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | Transistors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Temperatura de unión de funcionamiento | -40C to +175C (industry grade) | -40 °C to +175 °C |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK / TO-252) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | — |
| Configuration | Single | — |
| Estado RoHS | Compliant | Compliant |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| Gate-Emitter Voltage (VGE) | — | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Storage Temperature | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |