IPB017N10N5LFATMA1 vs IPB025N10N3GATMA1 Comparación
Comparación detallada lado a lado de IPB017N10N5LFATMA1 por Infineon y IPB025N10N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB017N10N5LFATMA1 - 100V 1.7mΩ OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 ✓ ActivoInfineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB017N10N5LFATMA1 | IPB025N10N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,05 | $3,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 Linear FET | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 180 A | — |
| Continuous Drain Current (ID) @ TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W | — |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΩ (max) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | -55C to +175C (junction) |
| Encapsulado / Carcasa | PG-TO263-7 (D2PAK-7), surface mount | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (unlimited) | 1 (unlimited) |
| Avalanche Rated | Yes | — |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) | — |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | — | 2.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V |
| Input Capacitance (Ciss) | — | 2.58 nF |
| Gate Charge (Qg) Typical | — | [DATA_NEEDED: Qg value] |
| Encapsulado | — | PG-TO263-7 (D2PAK-7) 6+Tab |
| Sin halógenos | — | Yes |