IPB021N10NM5LF2ATMA1 vs IPB024N10N5ATMA1 Comparación
Comparación detallada lado a lado de IPB021N10NM5LF2ATMA1 por Infineon y IPB024N10N5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ ActivoInfineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB021N10NM5LF2ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,75 | $1,86 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55C to +175C (junction) |
| Encapsulado | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO263-7 (D2PAK-7) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 (unlimited floor life at <30C/85% RH) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, TC=25C) | — | 180 A |
| Power Dissipation (PD, TC=25C) | — | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Packaging | — | Tape & Reel (13-inch reel) |
| Sin halógenos | — | Yes (per Infineon product family policy) |