IPB021N10NM5LF2ATMA1 vs IPT015N10NF2SATMA1 Comparación
Comparación detallada lado a lado de IPB021N10NM5LF2ATMA1 por Infineon y IPT015N10NF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB021N10NM5LF2ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,75 | $3,10 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 °C to +175 °C |
| Encapsulado | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS trench, N-channel enhancement |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Gate Drive Voltage (typ) | — | 10 V |
| Energía de avalancha de pulso único | — | [DATA_NEEDED: EAS value] |