IPB024N10N5ATMA1 vs IAUC60N10S5L110ATMA1 Comparación
Comparación detallada lado a lado de IPB024N10N5ATMA1 por Infineon y IAUC60N10S5L110ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB024N10N5ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,86 | $0,66 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | [DATA_NEEDED: min/max operating temperature] |
| Encapsulado | PG-TO263-7 (D2PAK-7) | PG-TDSON-8-33 (TDSON-8 Single) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 (unlimited floor life at <30C/85% RH) | 1 (per LCSC datasheet snippet) |
| Packaging | Tape & Reel (13-inch reel) | — |
| Sin halógenos | Yes (per Infineon product family policy) | Yes (per Infineon product classification) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™-5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | — | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | — | Yes (RoHS compliant per LCSC listing) |
| Packing Code | — | ATMA1 (Tape & Reel) |
| Customer Info / FGR | — | J52 (per Infineon product data) |