IPB17N25S3100ATMA1 vs IPG20N10S436AATMA1 Comparación
Comparación detallada lado a lado de IPB17N25S3100ATMA1 por Infineon y IPG20N10S436AATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon
IPG20N10S436AATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB17N25S3100ATMA1 | IPG20N10S436AATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,84 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB17N25S3100ATMA1 | — |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 250 V | 100 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 64 A | — |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | — |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | — |
| Input Capacitance (Ciss) | 1.5 nF | — |
| Output Capacitance (Coss) | 23 pF | — |
| Reverse Transfer Capacitance (Crss) | 625 pF | — |
| Power Dissipation (PD) | 107 W at Tc = 25 C | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TO263-3-2 (D2PAK-2) | PG-TDSON-8-10 (Wettable Flank) |
| Tipo de montaje | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Estado RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Configuration | — | Dual N-Channel (2 Elements with Built-in Diode) |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Total Power Dissipation (PD) | — | 43 W |
| Operating Mode | — | Enhancement Mode |
| Operating Temperature (TJ max) | — | +175 C |
| JESD-609 Code | — | e3 |
| Nivel MSL | — | MSL1 (260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100% |
| AOI Compatible | — | Yes (Wettable Flank) |
| Channel Type | — | N-Channel Normal Level |