IPB60R280P7ATMA1 vs IPA60R180P7SXKSA1 Comparación
Comparación detallada lado a lado de IPB60R280P7ATMA1 por Infineon y IPA60R180P7SXKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPB60R280P7ATMA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,88 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Encapsulado | PG-TO263-3 (D2PAK) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Tipo de montaje | Surface Mount | Through Hole |
| Recuento de pines | 3 (2 + Tab) | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (T_j max) | -55C to +150C (junction) |
| Configuration | Single N-Channel | Single |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | — | 26 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Channel Type | — | N-Channel |