IPC50N04S5L5R5ATMA1 vs IPC100N04S51R7ATMA1 Comparación
Comparación detallada lado a lado de IPC50N04S5L5R5ATMA1 por Infineon y IPC100N04S51R7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPC50N04S5L5R5ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,82 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-34 (SS08 leadless) |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Nivel MSL | — | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Estado RoHS | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |