IPD060N03LGATMA1 vs BSC117N08NS5ATMA1 Comparación
Comparación detallada lado a lado de IPD060N03LGATMA1 por Infineon y BSC117N08NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD060N03LGATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,20 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, TC=25C) | 50 A | — |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | 200 A | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| On-State Resistance (RDS(on), VGS=10V) | 6.0 mOhm (typ) / 7.5 mOhm (max) | — |
| On-State Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg, typ) | 21 nC | — |
| Output Charge (Qoss, typ) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Power Dissipation (PD, TC=25C) | 56 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC, max) | 2.5 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | 62 C/W | — |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (Unlimited) | 1 |
| Estado RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Packing | Tape & Reel (T/R), 2500 per reel | — |
| AEC-Q101 / Automotive Grade | Not qualified | — |
| Technology / Generation | OptiMOS 30V, trench MOSFET | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| Technology | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Encapsulado | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| Recuento de pines | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C (typical MOSFET junction) |
| Lead-Free | — | Yes |