IPD082N10N3GATMA1 vs IPD60R145CFD7ATMA1 Comparación
Comparación detallada lado a lado de IPD082N10N3GATMA1 por Infineon y IPD60R145CFD7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ ActivoInfineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD082N10N3GATMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,14 | $1,05 |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (Trench N-Channel) | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK), surface mount | — |
| Tipo de montaje | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| Recuento de pines | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Encapsulado | — | TO-252AA (DPAK) surface mount |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Temperatura de funcionamiento | — | -55C to +150C (junction) |
| Series | — | CoolMOS CFD7 |
| Target Application | — | ZVS / LLC resonant converters, soft switching |